Next-level performance

The power to transform what's next into what's now

Samsung's HBM (High Bandwidth Memory) solutions have been optimized for high-performance computing (HPC), and offer the performance needed to power next-generation technologies, such as artificial intelligence (AI), that will transform how we live, work, and connect.

The shining hour of stacked memory

Superior performance with HBM3E 12-layer

A new era of memory has begun. Samsung has achieved mass production of HBM3E stacked with 12 layers, delivering powerful performance in the memory industry. As the fifth generation of HBM, HBM3E Shinebolt achieves exceptional speeds, outstanding power efficiency, and superior thermal resistance. It extends to a wide range of applications, cementing its position as a key enabler for AI technology.

Dash through your data

A new era of memory has begun. Samsung’s HBM3E Shinebolt pushes the boundaries of high-performance memory with its advanced 12-layer stack. As the fifth generation of HBM, HBM3E delivers lightning-fast speeds. Its 12-layer stack offers up to 1,180GB/s bandwidth at 9.2Gbps, enabling robust performance for demanding workloads. Its scalability ensures it becomes a cornerstone for AI-driven innovation.

Leverage enhanced thermal resistance

HBM3E Shinebolt boasts a 11% improvement in thermal resistance compared to its predecessor, thanks to its advanced thermal compression non-conductive film(advanced TC NCF) technology. Stacking chips generates heat. To ensure efficient heat dissipation while maintaining strong signal connections between stacked chips, the bumps are strategically designed to be small where signal connection is needed and large where heat dissipation is required.

*TC NCF : Thermal Compression - Non-Conductive Film

Cover more with less power

Make datacenters run around the clock. HBM3E Shinebolt not only elevates performance but does so with less power, boasting an improved power efficiency of approximately 12% over the previous generation.

This advancement translates to reduced energy consumption and lower operational costs for datacenters.

Support a wider range of applications

With the rapid growth of AI, HBM3E Shinebolt is quickly becoming the definitive high-performance memory solution across industries. Datacenters rely on it for expanding AI services, supercomputers leverage it for massive data processing, and it plays a critical role in network infrastructure as well as in the future of advanced autonomous driving.

With greater bandwidth comes greater possibility

Meet the chip designed to supercharge data centers, lighten loads for high-performance computing, and tap AI’s full potential.

With 12 stacks of startlingly fast DRAM, HBM3 Icebolt is high-bandwidth memory at its fastest, most efficient, and highest capacity.
Built to go beyond today’s standards, so you can take on tomorrow’s challenges.

Breakthrough speed, breathtaking performance

The HBM3 Icebolt takes performance to a whole new level, with processing speeds up to 6.4Gbps and bandwidth that reaches 819GB/s.

That’s almost 1.8 times faster than our previous generation, so it makes everything you do feel fast and fluid –

whether you’re building lush worlds in the Metaverse, revving up your AI, or searching for tomorrow’s answers in a mountain of big data.

※ Source from Samsung Datasheet (Available upon request)

Stack the chips in your favor

Get more from your data, with the HBM designed to supercharge data centers.

HBM3 Icebolt stacks 12 layers of 10nm-class 16 Gb DRAM dies for 24GB of memory - an astonishing 1.5 times more than our previous generation.

The latest solution lets you go deep to build more robust neural networks and manage data faster than ever.

※ Source from Samsung Datasheet (Available upon request)

Do it all on less power

Faster processing and remarkably more memory – at a fraction of the power.

We’ve packed the HBM3 Icebolt with more potential than ever, but with an ultra-efficient design that gets 10% more power efficiency than

our previous generation. So you can lessen the burden on servers, even as you ramp up performance.

※ Source from Samsung Datasheet (Available upon request)

Level up to high reliability

HBM3 Icebolt provides enhanced self-correction and added reliability for your data - even at breakthrough transfer speeds.

The latest HBM solution corrects all 16-bit errors - a huge leap in ODECC performance over the previous generation,

which only corrected single-bit errors. So it eliminates more errors for better protection against corruption to keep your data stable and secure.

Samsung HBM HBM3E Shinebolt HBM3 Icebolt

  Part Number Density Package Speed Refresh Organization Product Status

  KHBBC4B03C-MC1K  36 GB MPGA 9.2 Gbps 32 ms 1024 Mass Production

  KHBA84A03D-MC1H  16 GB MPGA 6.4 Gbps 32 ms 1024 Mass Production

  KHBAC4A03D-MC1H  24 GB MPGA 6.4 Gbps 32 ms 1024 Mass Production

  KHBB84A03B-MC1J  24 GB MPGA 8.6 Gbps 32 ms 1024 Mass Production

  KHBA84A03C-MC1H  16 GB MPGA 6.4 Gbps 32 ms 1024 Mass Production

  KHBAC4A03C-MC1H  24 GB MPGA 6.4 Gbps 32 ms 1024 Mass Production

  KHAA84901B-JC18  16 GB MPGA 4.0 Gbps 32 ms 1024 EOL

  KHAA44801B-MC17  8 GB MPGA 3.6 Gbps 32 ms 1024 EOL

  KHAA84901B-MC17  16 GB MPGA 3.6 Gbps 32 ms 1024 EOL

  KHAA44801B-MC16  8 GB MPGA 3.2 Gbps 32 ms 1024 EOL

  KHAA84901B-JC16  16 GB MPGA 3.2 Gbps 32 ms 1024 EOL

  KHAA84901B-JC17  16 GB MPGA 3.6 Gbps 32 ms 1024 EOL

  KHAA84901B-MC16  16 GB MPGA 3.2 Gbps 32 ms 1024 EOL

  KHA843801B-MC12  4 GB MPGA 2.0 Gbps 32 ms 1024 EOL

  KHA844801X-MC12  4 GB MPGA 2.0 Gbps 32 ms 1024 EOL

  KHA844801X-MC13  4 GB MPGA 2.4 Gbps 32 ms 1024 EOL

  KHA844801X-MN12  4 GB MPGA 2.0 Gbps 32 ms 1024 EOL

  KHA844801X-MN13  4 GB MPGA 2.4 Gbps 32 ms 1024 EOL

  KHA883901B-MC12  8 GB MPGA 2.0 Gbps 32 ms 1024 EOL

  KHA884901X-MC12  8 GB MPGA 2.0 Gbps 32 ms 1024 EOL

  KHA884901X-MC13  8 GB MPGA 2.4 Gbps 32 ms 1024 EOL

  KHA884901X-MN12  8 GB MPGA 2.0 Gbps 32 ms 1024 EOL

  KHA884901X-MN13  8 GB MPGA 2.4 Gbps 32 ms 1024 EOL